Blank Cover Image

Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma

Author(s):
Ren, F.
Pearton, S.J.
Hobson, W.S.
Lothian, J.R.
Lopata, J.
Cole, M.W.
Caballero, J.A.
2 more
Publication title:
Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-21
Pub. Year:
1995
Page(from):
346
Page(to):
353
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771160 [1566771161]
Language:
English
Call no.:
E23400/961020
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2

Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S.

Materials Research Society
7 Conference Proceedings GaN Etching in BCl3/Cl2 Plasmas

Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, …

MRS - Materials Research Society
2 Conference Proceedings Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source

Cole, M.W., Han, W.Y., Pfeffer, R.L., Eckart, D.W., Pang, S.W., Ko, K.K., Ren, F., Hobson, W.S., Lothian, J.R., Lopata, …

Electrochemical Society
8 Conference Proceedings HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS

Pearton, S. J., Chakrabarti, U. K., Katz, A., Ren, F., Fullowan, T. R., Abernathy, C R., Hobson, W. S.

Materials Research Society
3 Conference Proceedings High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar

Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J.

Electrochemical Society
9 Conference Proceedings High-Rate Etching of Metals for Magnetoelectronic Applications

Pearton, S.J., Jung, K.B., Hong, J., Lee, J.W., Caballero, J.A., Childress, J.R., Jenson, M., Hurst, A.T., Jr.

Electrochemical Society
4 Conference Proceedings AFM Analysis of ECR Dry-Etched InGaP, AllnP and AlGaP

Ren, F., Hobson, W. S., Lothian, J. R., Lopata, J., Caballero, J. A., Lee, J. W., Pearton, S. J., Cole, M. W.

MRS - Materials Research Society
10 Conference Proceedings Demonstration of Enhancement-Mode p-Channel GaAs MOSFETs with Ga2O3 (Ga2O3) passivation

Ren, F., Hong, M.W., Hobson, W.S., Kuo, J.M., Lothian, J.R., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, …

Electrochemical Society
5 Conference Proceedings REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES

Pearton, S.J., Chakrabarti, U.K., Baiocchi, F.A., Hobson, W.S.

Materials Research Society
11 Conference Proceedings Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas

Shul, R. J., Briggs, R. D., Han, J., Pearton, S. J., Lee, J. W., Vartuli, C. B., Killeen, K. P., Ludowise, M. J.

MRS - Materials Research Society
6 Conference Proceedings Investigation of Wet Chemical Etching of InGaAlP Alloys

Lee, J.W., Santana, C.J., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S., Lothian, J.R., Wu, C.S.

Electrochemical Society
12 Conference Proceedings IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS

Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12