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Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source

Author(s):
Cole, M.W.
Han, W.Y.
Pfeffer, R.L.
Eckart, D.W.
Pang, S.W.
Ko, K.K.
Ren, F.
Hobson, W.S.
Lothian, J.R.
Lopata, J.
Caballero, J.A.
Pearton, S.J.
7 more
Publication title:
Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-21
Pub. Year:
1995
Page(from):
293
Page(to):
306
Pages:
14
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771160 [1566771161]
Language:
English
Call no.:
E23400/961020
Type:
Conference Proceedings

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