Temperature Dependence of Gate-Induced-Drain-Leakage (GIDL) Current in Thin-Film SOl MOSFETs

Temperature Dependence of Gate-Induced-Drain-Leakage (GIDL) Current in Thin-Film SOl MOSFETs

Author(s):

Publication title:

Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

95-9

Pub. Year:

1995

Page(from):

260

Page(to):

270

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771030 [156677103X]

Language:

English

Call no.:

E23400/952069

Type:

Conference Proceedings

Details

TDL ID:	ZA00013816
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Low Temperature Electronics and High Temperature Superconductivity ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 187th
Conf. info. (Venue):	Reno, NV, USA
Conf. info. (Date):	1995.05.21-1995.05.26

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