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DEVICE SIMULATIONS OF DIAMOND FETS WITH MES, P+-IP+ AND '△-DOPED' STRUCTURES IN COMPARISON WITH 6H-SIC MESFET

Author(s):
Publication title:
Proceedings of the Fourth International Symposium on Diamond Materials
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
95-4
Pub. Year:
1995
Page(from):
588
Page(to):
594
Pages:
7
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770989 [156677098X]
Language:
English
Call no.:
E23400/952064
Type:
Conference Proceedings

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