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Achieving 65-nm design rule dry etch performance: a study of CD bias, uniformity, and linearity on binary chrome photomasks

Author(s):
Publication title:
Photomask and Next-Generation Lithography Mask Technology XI
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5446
Pub. Year:
2004
Page(from):
88
Page(to):
93
Pages:
6
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453693 [0819453692]
Language:
English
Call no.:
P63600/5446.1
Type:
Conference Proceedings

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