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Modeling of phosphorous diffusion in ion-implanted Si at dopant transient enhanced out-diffusion during vacuum rapid thermal annealing

Author(s):
  • Kagadei, V.A. ( Research Institute of Semiconductor Devices (Russia) )
  • Markov, A.B. ( Institute of High Current Electronics (Russia) )
Publication title:
Micro- and Nanoelectronics 2003
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5401
Pub. Year:
2004
Page(from):
669
Page(to):
676
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453242 [0819453242]
Language:
English
Call no.:
P63600/5401
Type:
Conference Proceedings

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