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Initiated tunnel current through thin gate oxide generation of minority carriers in Si-MIS-structures

Author(s):
  • Chucheva, G.V. ( Institute of Radio Engineering and Electronics (Russia) )
  • Dudnikov, A.S. ( JSC Sitronics/Micron Corp. (Russia) )
  • Goldman, E.I. ( Institute of Radio Engineering and Electronics (Russia) )
  • Zaitsev, N.A. ( JSC Sitronics/Micron Corp. (Russia) )
  • Zhdan, A.G. ( Institute of Radio Engineering and Electronics (Russia) )
Publication title:
Micro- and Nanoelectronics 2003
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5401
Pub. Year:
2004
Page(from):
629
Page(to):
633
Pages:
5
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453242 [0819453242]
Language:
English
Call no.:
P63600/5401
Type:
Conference Proceedings

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