Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate

Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate

Author(s):

Starkov, V.V. ( Institute of Microelectronics Technology (Russia) )
Gavrilin, E.Y. ( Institute of Microelectronics Technology (Russia) )
Vyatkin, A.F. ( Institute of Microelectronics Technology (Russia) )
Emel'yanov, V.I. ( M.V. Lomonosov Moscow State Univ. (Russia) )
Eremin, K. ( M.V. Lomonosov Moscow State Univ. (Russia) )

Publication title:

Micro- and Nanoelectronics 2003

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5401

Pub. Year:

2004

Page(from):

225

Page(to):

234

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453242 [0819453242]

Language:

English

Call no.:

P63600/5401

Type:

Conference Proceedings

Details

TDL ID:	ZA00013753
Series ID:	PA00000029
Conf. info. (Name):	Micro- and Nanoelectronics
Conf. info. (Number):	2003
Conf. info. (Venue):	Zvenigorod, Russia
Conf. info. (Date):	2003.10.06-2003.10.10

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