Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films

Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films

Author(s):

Khomich, A.V. ( Institute of Radio Engineering and Electronics (Russia) )

Kovalev, V.I. ( Institute of Radio Engineering and Electronics (Russia) )

Vedeneev, A.S. ( Institute of Radio Engineering and Electronics (Russia) )

Kazanskii, A.G. ( M.V. Lomonosov Moscow State Univ. (Russia) )

Forsh, P.A. ( M.V. Lomonosov Moscow State Univ. (Russia) )

He, D. ( Lanzhou Univ. (China) )

Wang, X.Q. ( Lanzhou Univ. (China) )

Mell, H. ( Philipps-Univ. Marburg (Germany) )

Vlasov, I.I. ( General Physics Institute (Russia) )

Zavedeev, E.V. ( General Physics Institute (Russia) )

5 more

Publication title:

Micro- and Nanoelectronics 2003

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5401

Pub. Year:

2004

Page(from):

200

Page(to):

207

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453242 [0819453242]

Language:

English

Call no.:

P63600/5401

Type:

Conference Proceedings

Details

TDL ID:	ZA00013753
Series ID:	PA00000029
Conf. info. (Name):	Micro- and Nanoelectronics
Conf. info. (Number):	2003
Conf. info. (Venue):	Zvenigorod, Russia
Conf. info. (Date):	2003.10.06-2003.10.10

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