High-performance circuit design for the RET-enabled 65-nm technology node

High-performance circuit design for the RET-enabled 65-nm technology node

Author(s):

Liebmann, L.W. ( IBM Microelectronics Div. (USA) )

Barish, A.E. ( IBM Corp. (USA) )

Baum, Z. ( IBM Microelectronics Div. (USA) )

Bonges, H.A. ( IBM Microelectronics Div. (USA) )

Bukofsky, S.J. ( IBM Microelectronics Div. (USA) )

Fonseca, C.A. ( IBM Microelectronics Div. (USA) )

Halle, S.D. ( IBM Microelectronics Div. (USA) )

Northrop, G.A. ( IBM Corp. (USA) )

Runyon, S.L. ( IBM Corp. (USA) )

Sigal, L. ( IBM Corp. (USA) )

5 more

Publication title:

Design and process integration for microelectronic manufacturing II [sic] : 26-27 February 2004, Santa Clara, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5379

Pub. Year:

2004

Page(from):

20

Page(to):

29

Pages:

10

Pub. info.:

Bellingham, Wash., USA: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452924 [0819452920]

Language:

English

Call no.:

P63600/5379

Type:

Conference Proceedings

Details

TDL ID:	ZA00013731
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Design and process integration for microelectronic manufacturing
Conf. info. (Number):	2004 : 2nd
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2004.02.26-2004.02.27

Similar Items:

1 Conference Proceedings Layout optimization at the pinnacle of optical lithography (Invited Paper) Liebmann, L.W., Northrop, G.A., Culp, J., Sigal, L., Barish, A., Fonseca, C.A. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Scaling rules of phase error control for the manufacturing of alternating phase-shifting masks for 193-nm photolithography and beyond Wu, Q., Halle, S., Bukofsky, S.J., Butt, S.A., Hibbs, M.S. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Methodology for generating exposure tool specifications for alternating phase-shift mask application for 70-nm node Lai, K., Gallatin, G.M., Rosenbluth, A.E., Fonseca, C.A., Liebmann, L.W., Progler, C.J. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Double dipole lithography for 65-nm node and beyond: a technology readiness review Hsu, S.D., Eurlings, M., Hendrickx, E., Van Den Broeke, D.J., Chiou, T.-B., Chen, J.F., Laidig, T.L., Shi, X., Finders, … SPIE - The International Society of Optical Engineering
3 Conference Proceedings Mastering double exposure process window aware OPC by means of virtual targets [6349-69] Haffner, H., Baum, Z., Fonseca, C., Halle, S., Liebmann, L., Mahorowala, A. SPIE - The International Society of Optical Engineering	9 Conference Proceedings Meeting critical gate Iinewidth control needs at the 65 nm node [6156-23] Mahorowala, A., Halle, S., Gabor, A., Chu, W., Barberet, A., Samuels, D., Abdo, A., Tsou, L., Yan, W., Iseda, S., Patel … SPIE - The International Society of Optical Engineering
4 Conference Proceedings Effect of the effective resist diffusion length to the photolithography at 65- and 45-nm nodes: a study with simple and accurate analytical equations Wu, Q., Halle, S.D., Zhao, Z. SPIE - The International Society of Optical Engineering	10 Conference Proceedings Application of CPL reticle technology for the 65- and 50-nm node Conley, W., Broeke, D.J.V.D., Socha, R.J., Wu, W., Litt, L.C., Lucas, K., Nelson-Thomas, C.M., Roman, B.J., Chen, F., … SPIE-The International Society for Optical Engineering
5 Conference Proceedings Enabling the 70-nm technology nobe with 193-nm altPSM lithography(Invited Paper) Liebmann, L.W., Lund, J., Graur, I.C., Heng, F.-L., Fonseca, C.A., Culp, J., Gabor, A.H. SPIE-The International Society for Optical Engineering	11 Conference Proceedings Full-chip manufacturing reliability check implementation for 90-nm and 65-nm nodes using CPL and DDL Hsu, M., Laidig, T.L., Wampler, K.E., Hsu, S.D., Shi, X., Chen, J.F., Van Den Broeke, D.J., Hsieh, F. SPIE - The International Society of Optical Engineering
6 Conference Proceedings DRAm lithographic scaling in the sub-130-nm regime Bukofsky,S.J. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Critical failure ORC: application to the 90-nm and 65-nm nodes Belledent, J., Shang, S.D., Trouiller, Y., Miramond, C., Patterson, K., Toublan, O.R., Couderc, C., Sundermann, F., … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12