157-nm lithography with extremely high numerical aperture lens for 45-nm technology node

157-nm lithography with extremely high numerical aperture lens for 45-nm technology node

Author(s):

Suganaga, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Lee, J.-W. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Kurose, E. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Ishimaru, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Furukawa, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Itani, T. ( NEC Electronics Corp. (Japan) )

Fujii, K. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Cashmore, J.S. ( Exitech Ltd. (United Kingdom) )

Gower, M. ( Exitech Ltd. (United Kingdom) )

4 more

Publication title:

Optical Microlithography XVII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5377

Pub. Year:

2004

Page(from):

104

Page(to):

115

Pages:

12

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452900 [0819452904]

Language:

English

Call no.:

P63600/5377.1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013727
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical Microlithography
Conf. info. (Number):	2004 : 17th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2004.02.24-2004.02.27

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