E-beam proximity effect parameters for sub-100-nm features

E-beam proximity effect parameters for sub-100-nm features

Author(s):

Mountfield, K.R. ( Seagate Technology LLC (USA) )
Eckert, A.R. ( Seagate Technology LLC (USA) )
Yang, X.M. ( Seagate Technology LLC (USA) )
Johns, E.C. ( Seagate Technology LLC (USA) )

Publication title:

Advances in Resist Technology and Processing XXI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5376

Pub. Year:

2004

Page(from):

959

Page(to):

966

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452894 [0819452890]

Language:

English

Call no.:

P63600/5376.2

Type:

Conference Proceedings

Details

TDL ID:	ZA00013726
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2004 : 21st
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2004.02.23-2004.02.24

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