Fundamentals of developer-resist interactions for line-edge roughness and critical dimension control in model 248-nm and 157-nm photoresists

Fundamentals of developer-resist interactions for line-edge roughness and critical dimension control in model 248-nm and 157-nm photoresists

Author(s):

Prabhu, V.M. ( National Institute of Standards and Technology (USA) )

Wang, M.X. ( National Institute of Standards and Technology (USA) )

Jablonski, E.L. ( National Institute of Standards and Technology (USA) )

Vogt, B.D. ( National Institute of Standards and Technology (USA) )

Lin, E.K. ( National Institute of Standards and Technology (USA) )

Wu, W.-L. ( National Institute of Standards and Technology (USA) )

Goldfarb, D.L. ( IBM Thomas J. Watson Research Ctr. (USA) )

Angelopoulos, M. ( IBM Thomas J. Watson Research Ctr. (USA) )

Ito, H. ( IBM Almaden Research Ctr. (USA) )

4 more

Publication title:

Advances in Resist Technology and Processing XXI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5376

Pub. Year:

2004

Page(from):

443

Page(to):

451

Pages:

9

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452894 [0819452890]

Language:

English

Call no.:

P63600/5376.1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013725
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2004 : 21st
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2004.02.23-2004.02.24

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