Effect of line-edge roughness (LER) and line-width roughness (LWR) on sub-100-nm device performance
- Author(s):
Lee, J.-Y. ( Samsung Electronics Co., Ltd. (South Korea) ) Shin, J. ( Samsung Electronics Co., Ltd. (South Korea) ) Kim, H.-W. ( Samsung Electronics Co., Ltd. (South Korea) ) Woo, S.-G. ( Samsung Electronics Co., Ltd. (South Korea) ) Cho, H.-K. ( Samsung Electronics Co., Ltd. (South Korea) ) Han, W.-S. ( Samsung Electronics Co., Ltd. (South Korea) ) Moon, J.-T. ( Samsung Electronics Co., Ltd. (South Korea) ) - Publication title:
- Advances in Resist Technology and Processing XXI
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5376
- Pub. Year:
- 2004
- Page(from):
- 426
- Page(to):
- 433
- Pages:
- 8
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819452894 [0819452890]
- Language:
- English
- Call no.:
- P63600/5376.1
- Type:
- Conference Proceedings
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