Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography

Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography

Author(s):

Hagiwara, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Furukawa, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Itani, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) and NEC Electronics Corp. (Japan) )

Fujii, K. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )

Ishikawa, T. ( Daikin Industries, Ltd. (Japan) )

Koh, M. ( Daikin Industries, Ltd. (Japan) )

Kodani, T. ( Daikin Industries, Ltd. (Japan) )

Moriya, T. ( Daikin Industries, Ltd. (Japan) )

Yamashita, T. ( Daikin Industries, Ltd. (Japan) )

Araki, T. ( Daikin Industries, Ltd. (Japan) )

Toriumi, M. ( Daikin Industries, Ltd. (Japan) )

Aoyama, H. ( Daikin Industries, Ltd. (Japan) )

7 more

Publication title:

Advances in Resist Technology and Processing XXI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5376

Pub. Year:

2004

Page(from):

159

Page(to):

168

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452894 [0819452890]

Language:

English

Call no.:

P63600/5376.1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013725
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2004 : 21st
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2004.02.23-2004.02.24

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