Blank Cover Image

Toward a complete description of linewidth roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation

Author(s):
Publication title:
Metrology, Inspection, and Process Control for Microlithography XVIII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5375
Pub. Year:
2004
Page(from):
967
Page(to):
977
Pages:
11
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452887 [0819452882]
Language:
English
Call no.:
P63600/5375.2
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists

Ercken, M., Leunissen, L.H.A., Pollentier, I., Patsis, G.P., Constantoudis, V., Gogolides, E.

SPIE - The International Society of Optical Engineering
7 Conference Proceedings Fractal dimension of line width roughness and its effects on transistor performance

V. Constantoudis, E. Gogolides

Society of Photo-optical Instrumentation Engineers
2 Conference Proceedings Photoresist line-edge roughness analysis using scaling concepts

Constantoudis, V., Patsis, G.P., Gogolides, E.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings New features in program package POCAD

Leunissen,L.H.A., Stam,M.A.J.van der, Kruit,P.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Material origins of line-edge roughness: Monte Carlo simulations and scaling analysis

Patsis, G.P., Constantoudis, V., Gogolides, E.

SPIE - The International Society of Optical Engineering
9 Conference Proceedings Epoxidized novolac resist(EPR)for high-resolution negative and positive-tone electron beam lithography

Tegou,E., Gogolides,E., Argitis,P., Raptis,I., Patsis,G.P., Glezos,N., Tan,Z.C.H., Lee,K.Y., Le,P.T., Hsu,Y., …

SPIE - The International Society for Optical Engineering
4 Conference Proceedings Integrated simulation of line-edge roughness (LER) effects on sub-65 nm transistor operation: from lithography simulation to LER metrology to device operation …

Patsis G. P., Constantoudis V., Gogolides E.

SPIE - The International Society of Optical Engineering
10 Conference Proceedings CD-AFM versus CD-SEM for resist LER and LWR measurements [6152-31]

Foucher, J., Fabre, A. L., Gautier, P.

SPIE - The International Society of Optical Engineering
5 Conference Proceedings Correlation length and the problem of line width roughness

V. Constantoudis, G. P. Patsis, E. Gogolides

SPIE - The International Society of Optical Engineering
11 Conference Proceedings Effect of line-edge roughness (LER) and line-width roughness (LWR) on sub-100-nm device performance

Lee, J.-Y., Shin, J., Kim, H.-W., Woo, S.-G., Cho, H.-K., Han, W.-S., Moon, J.-T.

SPIE - The International Society of Optical Engineering
6 Conference Proceedings Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness

D. Drygiannakis, M. D. Nijkerk, G. P. Patsis, G. Kokkoris, I. Raptis, L. H. A. Leunissen, E. Gogolides

SPIE - The International Society of Optical Engineering
12 Conference Proceedings Electron-beam-patterning simulation and metrology of complex layouts on Si/Mo multilayer substrates

G. P. Patsis, D. Drygiannakis, N. Tsikrikas, I. Raptis, E. Gogolides

Society of Photo-optical Instrumentation Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12