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High-brightness GaInAs/(Al)GaAs quantum dot tapered lasers at 980 nm with a high wavelength stability

Author(s):
Auzanneau, S.-C. ( Thales Research and Technology (France) )
Calligaro, M. ( Thales Research and Technology (France) )
Krakowski, M. ( Thales Research and Technology (France) )
Deubert, S. ( Bayerische Julius-Maximilians-Univ. Wuerzburg (Germany) )
Reithmaier, J.P. ( Bayerische Julius-Maximilians-Univ. Wuerzburg (Germany) )
Forchel, A. ( Technische Physik Univ. Wuerzburg (Germany) )
1 more
Publication title:
Novel In-Plane Semiconductor Lasers III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5365
Pub. Year:
2004
Page(from):
60
Page(to):
71
Pages:
12
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452733 [0819452734]
Language:
English
Call no.:
P63600/5365
Type:
Conference Proceedings

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