High-brightness GaInAs/(Al)GaAs quantum dot tapered lasers at 980 nm with a high wavelength stability
- Author(s):
Auzanneau, S.-C. ( Thales Research and Technology (France) ) Calligaro, M. ( Thales Research and Technology (France) ) Krakowski, M. ( Thales Research and Technology (France) ) Deubert, S. ( Bayerische Julius-Maximilians-Univ. Wuerzburg (Germany) ) Reithmaier, J.P. ( Bayerische Julius-Maximilians-Univ. Wuerzburg (Germany) ) Forchel, A. ( Technische Physik Univ. Wuerzburg (Germany) ) - Publication title:
- Novel In-Plane Semiconductor Lasers III
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5365
- Pub. Year:
- 2004
- Page(from):
- 60
- Page(to):
- 71
- Pages:
- 12
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819452733 [0819452734]
- Language:
- English
- Call no.:
- P63600/5365
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
High-brightness (1 W with M2=2.9) GaInAs/(Al)GaAs index-guided quantum-dot tapered lasers at 980 nm with a high-wavelength stability
SPIE - The International Society of Optical Engineering |
7
Conference Proceedings
High power and very low noise operation at 1.3 and 1.5 μm with quantum dot and quantum dash Fabry-Perot lasers for microwave links [6399-20]
SPIE - The International Society of Optical Engineering |
2
Conference Proceedings
980-nm small-aperture tapered laser (1 W CW, M2-3) and tapered arrays (>3W CW): comparison between GalnAs/(Al)GaAs quantum dot and quantum well structures
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
4
Conference Proceedings
High-power and high-brightness laser diode structures at 980 nm using Al-free materials
SPIE-The International Society for Optical Engineering |
10
Conference Proceedings
High-brightness tapered laser diode bars and optical modules with Al-free active region (λ=980 nm)
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
11
Conference Proceedings
Ultra-low noise over wide-bandwidth of 1.55 μm InP-based quantum-dash Fabry-Perot lasers for microwave systems [5989-33]
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
12
Conference Proceedings
Gain and noise properties of InAs/Inp quantum dash semiconductor optical amplifiers (Invited Paper) [6014-04]
SPIE - The International Society of Optical Engineering |