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Electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy

Author(s):
Publication title:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5352
Pub. Year:
2004
Page(from):
412
Page(to):
421
Pages:
10
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452603 [0819452602]
Language:
English
Call no.:
P63600/5352
Type:
Conference Proceedings

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