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Low-threshold, high-T0 and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

Author(s):
Tandon, A. ( Agilent Technologies (USA) )
Bour, D.P. ( Agilent Technologies (USA) )
Chang, Y.L. ( Agilent Technologies (USA) )
Lin, C.K. ( Agilent Technologies (USA) )
Corzine, S.W. ( Agilent Technologies (USA) )
Tan, M.R. ( Agilent Technologies (USA) )
1 more
Publication title:
Physics and Simulation of Optoelectronic Devices XII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5349
Pub. Year:
2004
Page(from):
206
Page(to):
217
Pages:
12
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452573 [0819452572]
Language:
English
Call no.:
P63600/5349
Type:
Conference Proceedings

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