90-nm mask making processes using the positive tone chemically amplified resist FEP171

90-nm mask making processes using the positive tone chemically amplified resist FEP171

Author(s):

Butschke, J. ( Institut fur Mikroelektronik Stuttgart (Germany) )

Beyer, D. ( Leica Microsystems Lithography GmbH (Germany) )

Constantine, C. ( Unaxis USA, Inc. (USA) )

Dress, P. ( STEAG HamaTech AG (Germany) )

Hudek, P. ( Leica Microsystems Lithography GmbH (Germany) )

Irmscher, M. ( Institut fur Mikroelektronik Stuttgart (Germany) )

Koepernik, C. ( Institut fur Mikroelektronik Stuttgart (Germany) )

Krauss, C. ( STEAG HamaTech AG (Germany) )

Plumhoff, J. ( Unaxis USA, Inc. (USA) )

Voehringer, P. ( Institut fur Mikroelektronik Stuttgart (Germany) )

5 more

Publication title:

23rd Annual BACUS Symposium on Photomask Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5256

Pub. Year:

2003

Page(from):

344

Page(to):

354

Pages:

11

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819451439 [0819451436]

Language:

English

Call no.:

P63600/5256.1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013600
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
Conf. info. (Number):	2003 : 23rd
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2003.09.09-2003.09.12

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