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Effect of free carriers and excitons on the gain and temperature characteristics of InAs/InGaAs quantum dot lasers

Author(s):
Publication title:
Semiconductor optoelectronic devices for lightwave communication :8-10 September 2003, Orlando, Florida, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5248
Pub. Year:
2003
Page(from):
166
Page(to):
175
Pages:
10
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819451316 [0819451312]
Language:
English
Call no.:
P63600/5248
Type:
Conference Proceedings

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