4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET

4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET

Author(s):

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

1161

Page(to):

1164

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013364
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings 1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization Fursin, L., Li, X., Zhao, J.H. Trans Tech Publications	7 Conference Proceedings A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET Zhao, J.H., Li, X., Tone, Kiyoshi, Alexandrov, P., Pan, M., Weiner, M. Trans Tech Publications
2 Conference Proceedings 6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs Zhao, J.H., Tone, K., Li, X., Alexandrov, P., Fursin, L., Weiner, M. Trans Tech Publications	8 Conference Proceedings High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications Zhao, J.H., Li, X., Tone, K., Alexandrov, P., Fursin, L., Carter, J., Weiner, M. Trans Tech Publications
3 Conference Proceedings A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC Li, X., Fursin, L., Zhao, J.H., Alexandrov, P., Pan, M., Weiner, M., Burke, T., Khalil, G. Trans Tech Publications	9 Conference Proceedings All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A Luo, Y., Fursin, L., Zhao, J.H., Alexandrov, P., Wright, B., Weiner, M. Trans Tech Publications
4 Conference Proceedings A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC Li, X., Fursin, L., Zhao, J.H., Alexandrov, P., Pan, M., Weiner, M., Burke, T., Khalil, G. Trans Tech Publications	10 Conference Proceedings All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A Luo, Y., Fursin, L., Zhao, J.H., Alexandrov, P., Wright, B., Weiner, M. Trans Tech Publications
5 Conference Proceedings 10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors Li, Y.Z., Alexandrov, P., Zhang, J.H., Li, L.X., Zhao, J.H. Trans Tech Publications	11 Conference Proceedings The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications Zhao, J.H., Zhang, J., Luo, Y., Hu, X., Li, Y., Yu, H., Lai, J., Alexandrov, P., Fursin, L., Li, X., Carter, J., Weiner, … Trans Tech Publications
6 Conference Proceedings A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET Zhao, J.H., Li, X., Tone, K., Alexandrov, P., Pan, M., Weiner, M. Trans Tech Publications	12 Conference Proceedings 4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW Alexandrov, P., Wright, B., Pan, M., Weiner, M., Fursin, L., Zhao, J.H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12