Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Author(s):

Brosselard, P.

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

1129

Page(to):

1132

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013364
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings Fabrication and Characterisation of High-Voltage SiC-Thyristors Zorngiebel, V., Scharnholz, S., Spahn, E., Brosselard, P., Arssi, N., Chante, J.-P., Planson, D., Raynaud, C., … Trans Tech Publications	7 Conference Proceedings Pulse Current Characterization of SiC GTO Thyristors S. Scharnholz, B. Vergne, J.P. Konrath, G. Pâques, V. Zorngiebel Trans Tech Publications
2 Conference Proceedings A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery Brosselard, P., Bouchet, T., Planson, D., Scharnholz, S., Paques, G., Lazar, M., Raynaud, C., Chante, J. P., Spahn, E. Trans Tech Publications	8 Conference Proceedings Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension Raynaud, C., Lazar, M., Planson, D., Chante, J.P., Sassi, Z. Trans Tech Publications
3 Conference Proceedings 1.2 kV Pin Diodes with SiCrystal Epiwafer H. Vang, C. Raynaud, P. Brosselard, M. Lazar, P. Cremillieu, J.L. Leclercq, S. Scharnholz, D. Planson, J. Chante Trans Tech Publications	9 Conference Proceedings OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension Wang, S.R., Raynaud, C., Planson, D., Lazar, M., Chante, J.P. Trans Tech Publications
4 Conference Proceedings Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization Isoird, K., Lazar, M., Locatelli, M.-L., Raynaud, C., Planson, D., Chante, J.P. Trans Tech Publications	10 Conference Proceedings P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth Lazar, M., Jacquier, C., Dubois, C., Raynaud, C., Ferro, G., Planson, D., Brosselard, P., Monteil, Y., Chante, J. P. Trans Tech Publications
5 Conference Proceedings Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization Isoird, K., Lazar, M., Locatelli, M.-L., Raynaud, C., Planson, D., Chante, J.P. Trans Tech Publications	11 Conference Proceedings The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study Lazar, M., Cardinali, G., Raynaud, C., Poggi, A., Planson, D., Nipoti, R., Chante, J.P. Trans Tech Publications
6 Conference Proceedings SiC-Based Current Limiter Devices Chante, J.P., Tournier, D., Planson, D., Raynaud, C., Lazar, M., Locatelli, M.L., Brosselard, P. Trans Tech Publications	12 Conference Proceedings Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes H. Vang, S. Scharnholz, C. Raynaud, M. Lazar, G. Pâques Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12