Blank Cover Image

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

Author(s):
Publication title:
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
Title of ser.:
Materials science forum
Ser. no.:
457-460
Pub. Year:
2004
Page(from):
901
Page(to):
904
Pages:
4
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499434 [0878499431]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K.

Trans Tech Publications
7 Conference Proceedings Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing

J. Senzaki, T. Suzuki, A. Shimozato, K. Fukuda, K. Arai

Trans Tech Publications
2 Conference Proceedings Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K.

Trans Tech Publications
8 Conference Proceedings Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K.

Trans Tech Publications
3 Conference Proceedings Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature

Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H., Arai, K.

Trans Tech Publications
9 Conference Proceedings Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K.

Trans Tech Publications
4 Conference Proceedings Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration

J. Senzaki, A. Shimozato, K. Fukuda, K. Arai

Trans Tech Publications
10 Conference Proceedings High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing

Fukuda, K., Senzaki, J., Kojima, K., Suzuki, T.

Trans Tech Publications
5 Conference Proceedings Hot-Implantation of Phosphorus Ions into 4H-SiC

Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N., Okushi, H.

Trans Tech Publications
11 Conference Proceedings Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide

Senzaki, J., Fukuda, K., Ishida, Y., Tanaka, Y., Tanoue, H., Kobayashi, N., Tanaka, T., Arai, K.

Materials Research Society
6 Conference Proceedings Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides …

Senzaki, J., Shimozato, A., Fukuda, K.

Trans Tech Publications
12 Conference Proceedings Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Narita, K., Hijikata, Y., Yaguchi, H., Yoshida, S., Senzaki, J., Nakashima, S.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12