Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
- Author(s):
Kalinina, E. Kholuyanov, G. Strel'chuk, A. Davydov, D. Hallen, A. Konstantinov, A. Nikiforov, A. - Publication title:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- Title of ser.:
- Materials science forum
- Ser. no.:
- 457-460
- Pub. Year:
- 2004
- Page(from):
- 705
- Page(to):
- 710
- Pages:
- 6
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Trans Tech Publications |
9
Conference Proceedings
Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
Trans Tech Publications |