Properties of the Bound Excitons Associated to the 3838A Line in 4H-SiC and the 4182A Line in 6H-SiC
- Author(s):
- Publication title:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- Title of ser.:
- Materials science forum
- Ser. no.:
- 457-460
- Pub. Year:
- 2004
- Page(from):
- 549
- Page(to):
- 554
- Pages:
- 6
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
Trans Tech Publications |
11
Conference Proceedings
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
Trans Tech Publications |
6
Conference Proceedings
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
Trans Tech Publications |
Trans Tech Publications |