Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
- Author(s):
- Publication title:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- Title of ser.:
- Materials science forum
- Ser. no.:
- 457-460
- Pub. Year:
- 2004
- Page(from):
- 383
- Page(to):
- 386
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Effect of Gas Phase Nucleation on Silicon Carbide Chemical Vapor Deposition
Electrochemical Society |
4
Conference Proceedings
Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
Trans Tech Publications |
Electrochemical Society |
5
Conference Proceedings
Experimental and Theoretical Analysis of Heat and Mass Transport in the System for AlN Bulk Crystal Growth
Materials Research Society |
Trans Tech Publications |
6
Conference Proceedings
Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization
Trans Tech Publications |
Materials Research Society |