Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

Author(s):

Publication title:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

Title of ser.:

Materials science forum

Ser. no.:

433-436

Pub. Year:

2003

Page(from):

913

Page(to):

916

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013351
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2002 : 4th
Conf. info. (Venue):	Linköping, Sweden
Conf. info. (Date):	2002.09.02-2002.09.05

Similar Items:

1 Conference Proceedings Structural Defects in Electrically Degraded 4H-SiC PiN Diodes Persson, P.O.A., Jacobson, H., Molina-Aldareguia, J.M., Bergman, J.P., Tuomi, T., Clegg, W.J., Janzen, E., Hultman, L. Trans Tech Publications	7 Conference Proceedings High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects Lendenmann, H., Dahlquist, F., Bergman, J.P., Bleichner, H., Hallin, C. Trans Tech Publications
2 Conference Proceedings Structural Defects in Electrically Degraded 4H-SiC PiN Diodes Persson, P.O.A., Jacobson, H., Molina-Aldareguia, J.M., Bergman, J.P., Tuomi, T., Clegg, W.J., Janzen, E., Hultman, L. Trans Tech Publications	8 Conference Proceedings Growth of High Quality p-Type 4H-SiC Substrates by HTCVD Sundqvist, B., Ellison, A., Jonsson, A., Henry, A., Hallin, C., Bergman, J.P., Magnusson, B., Janzen, E. Trans Tech Publications
3 Conference Proceedings Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E. Trans Tech Publications	9 Conference Proceedings Electrical Activity of Residual Boron in Silicon Carbide Storasta, L., Bergman, J.P., Hallin, C., Janzen, E. Trans Tech Publications
4 Conference Proceedings Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC Lendenmann, H., Bergman, J.P., Dahlquist, F., Hallin, C. Trans Tech Publications	10 Conference Proceedings Electrical Activity of Residual Boron in Silicon Carbide Storasta, L., Bergman, J.P., Hallin, C., Janzen, E. Trans Tech Publications
5 Conference Proceedings Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers J. Hassan, A. Henry, J.P. Bergman Trans Tech Publications	11 Conference Proceedings Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soderholm, R., Lendenmann, H. Trans Tech Publications
6 Conference Proceedings High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects Lendenmann, H., Dahlquist, F., Bergman, J.P., Bleichner, H., Hallin, C. Trans Tech Publications	12 Conference Proceedings Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soederholm, R., Lendenmann, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12