Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

Author(s):

Publication title:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

Title of ser.:

Materials science forum

Ser. no.:

433-436

Pub. Year:

2003

Page(from):

907

Page(to):

912

Pages:

6

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013351
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2002 : 4th
Conf. info. (Venue):	Linköping, Sweden
Conf. info. (Date):	2002.09.02-2002.09.05

Similar Items:

1 Conference Proceedings Electronic Properties of Stacking Faults in 15R-SiC Iwata, H., Lindefelt, U., Oberg, S., Briddon, P.R. Trans Tech Publications	7 Conference Proceedings Theoretical Calculation of Stacking Fault Energies in Silicon Carbide Iwata, H., Lindefelt, U., OEberg, S., Briddon, P.R. Trans Tech Publications
2 Conference Proceedings Stacking Fault ? Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study Iwata, H., Lindefelt, U., Oberg, S., Briddon, P.R. Trans Tech Publications	8 Conference Proceedings Electronic Localization around Stacking Faults in Silicon Carbide Iwata, H., Lindefelt, U., OEberg, S., Briddon, P.R. Trans Tech Publications
3 Conference Proceedings Theoretical Calculation of Stacking Fault Energies in Silicon Carbide Iwata, H., Lindefelt, U., Oberg, S., Briddon, P.R. Trans Tech Publications	9 Conference Proceedings Theoretical Study of Cubic Polytype Inclusions in 4H-SiC Iwata, H., Lindefelt, U., Oberg, S., Briddon, P.R. Trans Tech Publications
4 Conference Proceedings Electronic Localization around Stacking Faults in Silicon Carbide Iwata, H., Lindefelt, U., Oberg, S., Briddon, P.R. Trans Tech Publications	10 Conference Proceedings An Ab Initio Study of Intrinsic Stacking Faults in GaN Iwata, H.P., Oeberg, S., Briddon, P.R. Trans Tech Publications
5 Conference Proceedings Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond Iwata, H., Lindefelt, U., Oberg, S., Briddon, P.R. Trans Tech Publications	11 Conference Proceedings Theoretical Study of Cubic Polytype Inclusions in 4H-SiC Iwata, H., Lindefelt, U., OEberg, S., Briddon, P.R. Trans Tech Publications
6 Conference Proceedings Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide Iwata, H., Lindefelt, U., Oberg, S., Briddon, P.R. Trans Tech Publications	12 Conference Proceedings Interstitial carbQn-hydrogen defects in silicon Leary,P., Oberg,S., Briddon,P.R., Jones,R. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12