Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
- Author(s):
Rost, H.-J. Irmscher, K. Doerschel, J. Siche, D. Schulz, D. Wollweber, J. - Publication title:
- Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
- Title of ser.:
- Materials science forum
- Ser. no.:
- 433-436
- Pub. Year:
- 2003
- Page(from):
- 91
- Page(to):
- 94
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499205 [0878499202]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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