The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

Author(s):

Uneus, L.

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

1419

Page(to):

1422

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013331
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures Uneus, L., Nakagomi, S., Linnarsson, M., Janson, M.S., Svensson, B.G., Yakimova, R., Syvaejaervi, M., Henry, A., Janzen, … Trans Tech Publications	7 Conference Proceedings Aluminum and Boron Diffusion in 4H-SiC Linnarsson, M.K., Janson, M.S., Schoner, A., Svensson, B.G. Materials Research Society
2 Conference Proceedings Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions Nakagomi, S., Shinobu, H., Uneus, L., Lundstrom, I., Ekedahl, L.-G., Yakimova, R., Syvajarvi, M., Henry, A., Janzen, E., … Trans Tech Publications	8 Conference Proceedings Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M., Janzen, E., Svensson, B.G. Trans Tech Publications
3 Conference Proceedings Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions Nakagomi, S., Shinobu, H., Uneus, L., Lundstrom, I., Ekedahl, L.-G., Yakimova, R., Syvaejaervi, M., Henry, A., Janzen, … Trans Tech Publications	9 Conference Proceedings Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC Janson, M.S, Hallen, A., Linnarsson, M.K., Nordell, N., Karlsson, S., Svensson, B.G. Trans Tech Publications
4 Conference Proceedings Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC Linnarsson, M. K., Spetz, A. Ll., Janson, M. S., Ekedahl, L. G., Karlsson, S., Schoner, A., Lundstrom, I., Svensson, B. … Trans Tech Publications	10 Conference Proceedings In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates Linnarsson, M.K., Janson, M.S., Forsberg, U., Janzen, E. Trans Tech Publications
5 Conference Proceedings Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC Linnarsson, M.K., Janson, M.S., Shoner, A., Konstantinov, A., Svensson, B.G. Trans Tech Publications	11 Conference Proceedings SiC Based Gas Sensors and their Applications Savage, S., Svenningstorp, H., Uneus, L., Kroutchinine, A., Tobias, P., Ekedahl, L.G., Lundstrom, I., Harris, C.I., … Trans Tech Publications
6 Conference Proceedings Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M.S., Janzen, E., Svensson, B.G. Trans Tech Publications	12 Conference Proceedings Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode Nakagomi, S., Takahashi, M., Kokubun, Y., Uneus, L., Savage, S., Wingbrant, H., Andersson, M., Lundstrom, I., Loefdahl, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12