Blank Cover Image

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Author(s):
Tournier, D.
Godignon, P.
Montserrat, J.
Planson, D.
Chante, J.P.
Sarrus, F.
1 more
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. Year:
2002
Page(from):
1403
Page(to):
1406
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Tournier, D., Godignon, P., Montserrat, J., Planson, D., Chante, J.P., Sarrus, F.

Trans Tech Publications
7 Conference Proceedings Current Sensing for SiC Power Devices

Tournier, D., Vellvehi, M., Godignon, P., Montserrat, J., Planson, D., Sarrus, F.

Trans Tech Publications
2 Conference Proceedings Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Tournier, D., Godignon, Ph., Montserrat, J., Planson, D., Raynaud, C., Lazar, M., Chante, J.P., Sarrus, F., Bonhomme, …

Trans Tech Publications
8 Conference Proceedings New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

P. Brosselard, D. Tournier, M. Vellvehi, J. Montserrat, P. Godignon, J. Millan

Trans Tech Publications
3 Conference Proceedings Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter

Tournier, D., Godignon, P., Planson, D., Chante, J.P., Sarrus, F.

Trans Tech Publications
9 Conference Proceedings OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

C. Raynaud, D. Loup, P. Godignon, R.P. Rodriguez, D. Tournier, D. Planson

Trans Tech Publications
4 Conference Proceedings Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter

Tournier, D., Godignon, P., Planson, D., Chante, J.P., Sarrus, F.

Trans Tech Publications
10 Conference Proceedings Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension

Raynaud, C., Lazar, M., Planson, D., Chante, J.P., Sassi, Z.

Trans Tech Publications
5 Conference Proceedings Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

A. Devie, D. Tournier, P. Godignon, M. Vellvehi, J. Montserrat

Trans Tech Publications
11 Conference Proceedings High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Lazar, M., Ottaviani, L., Locatelli, M.L., Raynaud, C., Planson, D., Morvan, E., Godignon, P., Skorupa, W., Chante, J.P.

Trans Tech Publications
6 Conference Proceedings On-Chip Temperature Monitoring of a SiC Current Limiter

Tournier, D., Godignon, P., Millan, J., Planson, D., Chante, J.P., Sarrus, F., de Palma, J.F.

Trans Tech Publications
12 Conference Proceedings SiC-Based Current Limiter Devices

Chante, J.P., Tournier, D., Planson, D., Raynaud, C., Lazar, M., Locatelli, M.L., Brosselard, P.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12