Plasma Oxidation of SiC at Low Temperatures (below 300oC)

Plasma Oxidation of SiC at Low Temperatures (below 300oC)

Author(s):

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

1105

Page(to):

1108

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013331
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings Plasma Oxidation of SiC at Low Temperatures (below 300oC) Satoh, M., Shimada, H., Nakamura, T., Nagamoto, N., Yanagihara, S. Trans Tech Publications	7 Conference Proceedings Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation M. Satoh, S. Nagata, T. Nakamura, H. Doi, M. Shibagaki Trans Tech Publications
2 Conference Proceedings Ohmic Contact Formation on n-Type 6H-SiC using NiSi2 Nakamura, T., Shimada, H., Satoh, M. Trans Tech Publications	8 Conference Proceedings NiSi2 Ohmic Contact to n-Type 4H-SiC Nakamura, T., Satoh, M. Trans Tech Publications
3 Conference Proceedings Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing T. Sugimoto, M. Satoh, T. Nakamura, K. Mashimo, H. Doi Trans Tech Publications	9 Conference Proceedings NiSi2 Ohmic Contact to n-Type 4H-SiC Nakamura, T., Satoh, M. Trans Tech Publications
4 Conference Proceedings PLASMA ASSISTED OXIDATION OF Si AT TEMPERATURE BELOW 800oC Williams, C.K., Reisman, A. Materials Research Society	10 Conference Proceedings Homoepitaxial Growth of 4H-SiC Thin Film Below 1000oC by Microwave Plasma Chemical Vapor Deposition Okamoto, Mitsuo, Kosugi, R., Tanaka, Y., Takeuchi, D., Nakashima, S., Nishizawa, S., Fukuda, K., Okushi, H., Arai, K. Trans Tech Publications
5 Conference Proceedings Homoepitaxial Growth of 4H-SiC Thin Film Below 1000oC by Microwave Plasma Chemical Vapor Deposition Okamoto, M., Kosugi, R., Tanaka, Y., Takeuchi, D., Nakashima, S., Nishizawa, S., Fukuda, K., Okushi, H., Arai, K. Trans Tech Publications	11 Conference Proceedings Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001) Nakamura, T., Matsumoto, S., Horibe, T., Satoh, M. Trans Tech Publications
6 Conference Proceedings Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures Satoh, M., Suzuki, T., Miyagawa, S. Trans Tech Publications	12 Conference Proceedings Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001) Nakamura, T., Matsumoto, S., Horibe, T., Satoh, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12