Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry

Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry

Author(s):

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

335

Page(to):

338

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013331
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry Shimizu, H., Ohba, T., Hisada, K. Trans Tech Publications	7 Conference Proceedings Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD Shimizu, H., Aoyama, Y. Trans Tech Publications
2 Conference Proceedings Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates Shimizu, H., Hisada, K. Trans Tech Publications	8 Conference Proceedings Epitaxial growth of gamma-al2O3 insulator films on Si by molecular beam epitaxy using an Al solid source and N2O gas Wado, H., Shimizu, T., Ohtani, K., Jung, Y.C., Ishida, M. Materials Research Society
3 Conference Proceedings Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC Shimizu, H., Ohba, T. Trans Tech Publications	9 Conference Proceedings LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications
4 Conference Proceedings Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates Shimizu, H., Hisada, K., Aoyama, Y. Trans Tech Publications	10 Conference Proceedings Growth of SiC on Si(100) by Low-Pressure MOVPE Bakin, A.S., Ivanov, A., Hisada, K., Riedl, T., Hitzel, F., Wehmann, H.-H., Schlachetzki, A. Trans Tech Publications
5 Conference Proceedings The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC Y. Watanabe, T. Horikawa, K. Kamimura Trans Tech Publications	11 Conference Proceedings Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC as buffer layers Hong, S. Q., Liaw, H. M., Linthicum, K., Davis, R. F., Fejes, P., Zollner, S., Kottke, M., Wilson, S. R. MRS-Materials Research Society
6 Conference Proceedings Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD H. Shimizu, A. Kato Trans Tech Publications	12 Conference Proceedings Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD H. Shimizu, T. Watanabe Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12