Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

Author(s):

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

331

Page(to):

334

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013331
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications	7 Conference Proceedings Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Jacob, C., Pirouz, P., Nishino, S. Trans Tech Publications
2 Conference Proceedings Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications	8 Conference Proceedings Growth of Columnar SiC on Patterned Si Substrates by CVD Nishino, Shigehiro, Okui, Yoichi, Tai, Yuehai, Jacob, Chacko Materials Research Society
3 Conference Proceedings Channel Epitaxy of 3C-SiC on Si Substrates by CVD Nishino, S., Okui, Y., Jacob, C., Ohshima, S. Materials Research Society	9 Conference Proceedings Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane Jacob, C., Hong, M. -H., Chung, J., Pirouz, P., Nishino, S. Trans Tech Publications
4 Conference Proceedings Pendeo Epitaxial Growth of 3C-SiC on Si Substrates Shoji, A., Okui, Y., Nishiguchi, T., Ohshima, S., Nishino, S. Trans Tech Publications	10 Conference Proceedings Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si2Cl6+C3H8 System Masuda, Y., Ohshima, S., Jacob, C., Nishino, S. Trans Tech Publications
5 Conference Proceedings Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD Nishino, S., Masuda, Y., Ohshima, S., Jacob, C. Trans Tech Publications	11 Conference Proceedings Epitaxial Growth of 2 Inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Zhu, Jiliang, Chen, Yi, Mukai, Yusuke, Shoji, Akira, Nishiguchi, Taro, Ohshima, Satoru, Nishino, S. Materials Research Society
6 Conference Proceedings Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates Nishino, S., Shoji, A., Nishiguchi, T., Ohshima, S. Materials Research Society	12 Conference Proceedings Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method Sugishita, S., Shoji, A., Mukai, Y., Nishiguchi, T., Michikami, K., Issiki, T., Ohshima, S., Nishino, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12