Blank Cover Image

The Deep Boron Level in High-Voltage PiN Diodes

Author(s):
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. Year:
2002
Page(from):
1309
Page(to):
1312
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The Deep Boron Level in High-Voltage PiN Diodes

Stadler, W., Hallen, A., Osterman, J., Zimmermann, U., Svensson, B.G.

Trans Tech Publications
7 Conference Proceedings Doping of Silicon Carbide by Ion Implantation

Svensson, B.G., Hallen, A., Linnarsson, M.K., Kuznetsov, A.Yu., Janson, M.S, Aberg, D., Oesterman, J., Persson, P.O.A., …

Trans Tech Publications
2 Conference Proceedings Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level

Domeij, M., Zimmermann, U., Aberg, D., Ostermann, J., Hallen, A., Ostling, M.

Trans Tech Publications
8 Conference Proceedings Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes

Zimmermann, U., Hallen, A., Breitholtz, B.

Trans Tech Publications
3 Conference Proceedings Implantation Temperature Dependent Deep Level Defects in 4H-SiC

Aberg, D., Storasta, L., Hallen, A., Svensson, B.G.

Trans Tech Publications
9 Conference Proceedings Electrical and Optical Characterisation of High Voltage 4H Silicon Carbide Diodes

Hallen, A., Zimmermann, U., Osterman, J., Galeckas, A., Linnros, J., Breitholtz, B.

Electrochemical Society
4 Conference Proceedings Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Zimmermann, U., OEsterman, J., Zhang, J., Henry, A., Hallen, A.

Trans Tech Publications
10 Conference Proceedings Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

Osterman, J., Hallen, A., Jargelius, M., Zimmermann, U., Galeckas, A., Breitholtz, B.

Trans Tech Publications
5 Conference Proceedings Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

Leveque, P., Martin, D., Svensson, B.G., Hallen, A.

Trans Tech Publications
11 Conference Proceedings Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Zimmermann, U., Osterman, J., Zhang, J., Henry, A., Hallen, A.

Trans Tech Publications
6 Conference Proceedings Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

G. Alfieri, A. Mihaila, H.M. Ayedh, B.G. Svensson, P. Hazdra

Trans Tech Publications
12 Conference Proceedings Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

Aberg,D., Hallberg,T., Svensson,B.G., Lindstrom,J.L., Kleverman,M.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12