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5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2

Author(s):
Sugawara, Y.
Asano, K.
Takayama, D.
Ryu, S.
Singh, R.
Palmour, J.W.
Hayashi, T.
2 more
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. Year:
2002
Page(from):
1199
Page(to):
1202
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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