Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC

Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC

Author(s):: Matsuura, H.
Publication title:: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:: Materials science forum
Ser. no.:: 389-393
Pub. Year:: 2002
Page(from):: 679
Page(to):: 682
Pages:: 4
Pub. info.:: Zuerich, Switzerland: Trans Tech Publications
ISSN:: 02555476
ISBN:: 9780878498949 [087849894X]
Language:: English
Call no.:: M23650
Type:: Conference Proceedings

Details

TDL ID:	ZA00013330
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

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