Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors

Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors

Author(s):

Publication title:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

Title of ser.:

Materials science forum

Ser. no.:

353-356

Pub. Year:

2001

Page(from):

739

Page(to):

742

Pages:

4

Pub. info.:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013315
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2000 : 3rd
Conf. info. (Venue):	Benediktinerkloster Banz, Germany
Conf. info. (Date):	2000.09.00

Similar Items:

1 Conference Proceedings Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC Tang, Y., Fedison, J.B., Chow, T.P. Trans Tech Publications	7 Conference Proceedings Reactive ion etching of GaN in BCl3/N2 plasmas Fedison, J.B., Chow, T.P., Lu, H., Bhat, I.B. Electrochemical Society
2 Conference Proceedings Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC Tang, Y., Fedison, J.B., Chow, T.P. Trans Tech Publications	8 Conference Proceedings 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications
3 Conference Proceedings Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors Fedison, J. B., Chow, T. P., Ghezzo, M., Kretchmer, J. W., Nielsen, M. C. Trans Tech Publications	9 Conference Proceedings Optimization of 4H-SiC MOS Properties with Cesium Implantation Y. Wang, T. Khan, T.P. Chow Trans Tech Publications
4 Conference Proceedings Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill Losee, P.A., Li, C.H., Kumar, R.J., Chow, T.P., Bhat, I.B., Gutmann, R.J., Stahlbush, R.E. Trans Tech Publications	10 Conference Proceedings Pulse Current Characterization of SiC GTO Thyristors S. Scharnholz, B. Vergne, J.P. Konrath, G. Pâques, V. Zorngiebel Trans Tech Publications
5 Conference Proceedings Electrical Characteristics of In Situ Grown Lateral P+N GaN Junction Diodes on Sapphire Substrates Fedison,J.B., Chow,T.P., Lu,H., Bhat,I.B. Trans Tech Publications	11 Conference Proceedings Characteristics and Ionization Coefficient Extraction of 1kv 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped … Zhu, L., Losee, P.A., Chow, T.P., Jones, K.A., Scozzie, C.J., Ervin, M.H., Shah, P.B., Derenge, M.A., Vispute, R.D., … Trans Tech Publications
6 Conference Proceedings Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers Fedison, J. B., Li, Z., Khemka, V., Ramungul, N., Chow, T. P., Ghezzo, M., Kretchmer, J. W., Elasser, A. Trans Tech Publications	12 Conference Proceedings Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs H. Naik, K. Tang, T.P. Chow Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12