Stability of Molybdenum Schottky Contact to Silicon Carbide

Stability of Molybdenum Schottky Contact to Silicon Carbide

Author(s):

Publication title:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

Title of ser.:

Materials science forum

Ser. no.:

353-356

Pub. Year:

2001

Page(from):

611

Page(to):

614

Pages:

4

Pub. info.:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013315
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2000 : 3rd
Conf. info. (Venue):	Benediktinerkloster Banz, Germany
Conf. info. (Date):	2000.09.00

Similar Items:

1 Conference Proceedings Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide Fukuda, Y., Nishikawa, K., Shimizu, M., Iwakuro, H. Trans Tech Publications	7 Conference Proceedings Impurity Conduction in Silicon Carbide M. Krieger, K. Semmelroth, H.B. Weber, G. Pensl, M. Rambach, L. Frey Trans Tech Publications
2 Conference Proceedings Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide Fukuda, Y., Nishikawa, K., Shimizu, M., Iwakuro, H. Trans Tech Publications	8 Conference Proceedings Analyses of Au/Si Schottky Barrier-Induced AC Surface Photovoltages in N-Type Silicon Wafers Rinsed in Au Aqueous Solution H. Shimizu, E. Omori, M. Ikeda Electrochemical Society
3 Conference Proceedings Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation Maeyama, Y., Nishikawa, K., Fukuda, Y., Shimizu, M., Sato, M., Ono, J., Iwakuro, H. Trans Tech Publications	9 Conference Proceedings Graphene Ohmic Contacts to n-Type Silicon Carbide (0001) S. Hertel, A. Finkler, M. Krieger, H.B. Weber Trans Tech Publications
4 Conference Proceedings Reverse Biased Electrochemical Etching of SiC-SBD K. Nishikawa, Y. Maeyama, Y. Fukuda, M. Shimizu, M. Sato, H. Iwakuro Trans Tech Publications	10 Conference Proceedings GaZnO as a Transparent Electrode to Silicon Carbide J.H. Lee, J.H. Kim, K.M. Do, B.M. Moon, S.J. Joo Trans Tech Publications
5 Conference Proceedings Grain Boundary Geometry of Superplastic Silicon Carbide Ceramic Miyazaki, H., Shimizu, S., Iseki, T., Yasuda, K., Yano, Y., Mitomo, M. Trans Tech Publications	11 Conference Proceedings Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode Y. Okada, H. Nishikawa, Y. Sano, K. Yamamura, K. Yamauchi Trans Tech Publications
6 Conference Proceedings Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown Vassilevski, K.V., Nikitina, I.P., Bhatnagar, P., Horsfall, A.B., Wright, N.G., O'Neill, A.G., Uren, M.J., Hilton, K., … Trans Tech Publications	12 Conference Proceedings 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring K. Vasilevskiy, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12