Free Carrier Diffusion in 4H-SiC

Free Carrier Diffusion in 4H-SiC

Author(s):

Grivickas, P.

Publication title:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

Title of ser.:

Materials science forum

Ser. no.:

353-356

Pub. Year:

2001

Page(from):

353

Page(to):

356

Pages:

4

Pub. info.:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013315
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2000 : 3rd
Conf. info. (Venue):	Benediktinerkloster Banz, Germany
Conf. info. (Date):	2000.09.00

Similar Items:

1 Conference Proceedings Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence Grivickas, P., Linnros, J., Grivickas, V. Trans Tech Publications	7 Conference Proceedings Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies Grivickas, V., Grivickas, P., Linnros, J., Galeckas, A. Trans Tech Publications
2 Conference Proceedings Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum Grivickas, P., Grivickas, V., Galeckas, A., Linnros, J. Trans Tech Publications	8 Conference Proceedings Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On Tomblad,O., Galeckas,A., Linnros,J., Breitholtz,B., Lindefelt,U. Trans Tech Publications
3 Conference Proceedings Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection Grivickas, V., Galeckas, A., Grivickas, P., Linnros, J. Trans Tech Publications	9 Conference Proceedings Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions V. Grivickas, K. Gulbinas, P. Grivickas, G. Manolis, J. Linnros Trans Tech Publications
4 Conference Proceedings Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum Grivickas, P., Grivickas, V., Galeckas, A., Linnros, J. Trans Tech Publications	10 Conference Proceedings Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off Martinez, A., Lindefelt, U. Trans Tech Publications
5 Conference Proceedings Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers:A Study of Carrier Recombination and Transport Parameters Grivickas,V., Linnros,J., Galeckas,A. Trans Tech Publications	11 Conference Proceedings Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC Martinez, A., Hjelm, M., Nilsson, H.E., Lindefelt, U. Trans Tech Publications
6 Conference Proceedings Evaluation of Auger Recombination Rate in 4H-SiC Galeckas,A., Linnros,J., Grivickas,V., Lindefelt,U., Hallin,C. Trans Tech Publications	12 Conference Proceedings A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes Martinez, A., Nilsson, H.-E., Lindefelt, U. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12