Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
- Author(s):
- Publication title:
- Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
- Title of ser.:
- Materials science forum
- Ser. no.:
- 353-356
- Pub. Year:
- 2001
- Page(from):
- 123
- Page(to):
- 126
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498734 [0878498737]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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