Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
- Author(s):
- Publication title:
- Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
- Title of ser.:
- Materials science forum
- Ser. no.:
- 353-356
- Pub. Year:
- 2001
- Page(from):
- 45
- Page(to):
- 48
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498734 [0878498737]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Low Temperature Photoluminescence of 13C Enriched SiC-Crystals Grown by the Modified Lely Method
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Trans Tech Publications |