Large Diameter, Low Defect Silicon Carbide Boule Growth
- Author(s):
Carter, C.H., Jr. Glass, R.C. Brady, M.F. Malta, D. Henshall, D. Mueller, S. Tsvetkov, V.F. Hobgood, D. Powell, A. - Publication title:
- Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
- Title of ser.:
- Materials science forum
- Ser. no.:
- 353-356
- Pub. Year:
- 2001
- Page(from):
- 3
- Page(to):
- 6
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498734 [0878498737]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications
Materials Research Society |
4
Conference Proceedings
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
Trans Tech Publications |
MRS - Materials Research Society |
5
Conference Proceedings
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Trans Tech Publications |
Materials Research Society |
6
Conference Proceedings
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Trans Tech Publications |
Trans Tech Publications |