HgCdTe epilayers on GaAs: growth and devices (Invited Paper)

HgCdTe epilayers on GaAs: growth and devices (Invited Paper)

Author(s):

Varavin, V.S. ( Institute of Semiconductor Physics (Russia) )

Vasiliev, V.V. ( Institute of Semiconductor Physics (Russia) )

Dvoretsky, S.A. ( Institute of Semiconductor Physics (Russia) )

Mikhailov, N.N. ( Institute of Semiconductor Physics (Russia) )

Ovsyuk, V.N. ( Institute of Semiconductor Physics (Russia) )

Sidorov, Yu.G. ( Institute of Semiconductor Physics (Russia) )

Suslyakov, A.O. ( Institute of Semiconductor Physics (Russia) )

Yakushev, M.V. ( Institute of Semiconductor Physics (Russia) )

Aseev, A.L. ( Institute of Semiconductor Physics (Russia) )

4 more

Publication title:

Solid State Crystals 2002: Crystalline Materials for Optoelectronics

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5136

Pub. Year:

2003

Page(from):

381

Page(to):

395

Pages:

15

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819450043 [0819450049]

Language:

English

Call no.:

P63600/5136

Type:

Conference Proceedings

Details

TDL ID:	ZA00013124
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Solid State Crystals
Conf. info. (Number):	2002 : 3rd
Conf. info. (Venue):	Zakopane, Poland
Conf. info. (Date):	2002.10.14-2002.10.18

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