In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGe xCy by Spectroscopic Ellipsometry and Comparison with Other Established Techniques

In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGe xCy by Spectroscopic Ellipsometry and Comparison with Other Established Techniques

Author(s):

Loo, R.

Publication title:

Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5133

Pub. Year:

2003

Page(from):

329

Page(to):

338

Pages:

10

Pub. info.:

Pennington, NJ: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819449993 [0819449997]

Language:

English

Call no.:

P63600/5133

Type:

Conference Proceedings

Details

TDL ID:	ZA00013121
Series ID:	PA00000029
Conf. info. (Name):	ALTECH 2003 : Analytical Techniques for Semiconductor Materials and Process Characterization IV ; Meeting of the Electrochemical Society : Diagnostic Techniques for Semiconductor Materials and Devices VI
Conf. info. (Number):	2003 : 4th ; 202nd : 6th
Conf. info. (Venue):	Paris, France ; Salt Lake City, UT, USA
Conf. info. (Date):	2003.04.00 ; 2002.10.00

Similar Items:

1 Conference Proceedings In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGexCx by Spectroscopic Ellipsometry and Comparison with Other Established Techniques Lao, R., Meunier-Beillard, P., Koumoto, R.Deihougne.T., Geenen, L., Brijs, B., Vandervorst, W. Electrochemical Society	7 Conference Proceedings Analysis of Junctions Formed in Strained Si/SiGe Substrates Eneman, G., Simoen, E., Lauwers, A., Lindsay, R., Verheyen, P., Delhougne, R., Loo, R., Caymax, M., Meunier-Beillard, … Materials Research Society
2 Conference Proceedings Analysis of Selectively Grown Epitaxial Si1-xGex by Spectroscopic Ellipsometry and Comparison with RBS and SIMS Loo,R., Caymax,M., Libezny,M., Blavier,G., Brijs,B., Geene,L., Vandervorst,W. SPIE - The International Society for Optical Engineering	8 Conference Proceedings Ion implantation in Ge and associated defect control (invited paper) Satta, A., Simoen, E., Janssens, T., Benedetti, A., Clarysse, T., De Jaeger, B., Geenen, L., Brijs, B., Meuris, M., … Electrochemical Society
3 Conference Proceedings In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by spectroscopic ellipsometery and comparison with other … Loo,R., Caymax,M., Blavier,G., Kremer,S. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Characterization of Ultra Thin Layers by Rutherford Backscattering Spectrometry Brijs,B., Deleu,J., Connard,T., Li,H., Loo,R., Caymax,M., Nakajima,K., Kimura,K., Vandervorst,W. SPIE - The International Society for Optical Engineering
4 Conference Proceedings (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices Loo, R., Delhougne, R., Meunier-Beillard, P., Caymax, M., Verheyen, P., Eneman, G., Wolf, I.De, Janssens, T., Benedetti, … Materials Research Society	10 Conference Proceedings Physical Characterization of Thin HfO2 Layers by the Combined Analysis with Complementary Techniques Bender, H., Conard, T., Richard, O., Brijs, B., Petry, J., Vandervorst, W., Defranoux, C., Boher, P., Rochat, N., Wyon, … SPIE-The International Society for Optical Engineering
5 Conference Proceedings A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R. Materials Research Society	11 Conference Proceedings Physical Characterization of Thin HfO2 Layers by the Combined Analysis with Complementary Techniques Bender, H., Brijs, B., Peby, J., Vandervorst, W., Defranoux, C., Boher, P., Rochat, N., Wyon, C., Mack, P., … Electrochemical Society
6 Conference Proceedings A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R. Materials Research Society	12 Conference Proceedings The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12