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Dependence of pattern printability on thicknesses of absorber and cap layers of Mo/Si mask blank for EUV lithography

Author(s):
  • Sugawara, M. ( Association of Super-Advanced Electronics Technologies (Japan) )
  • Chiba, A. ( Association of Super-Advanced Electronics Technologies (Japan) )
  • Yamanashi, H. ( Association of Super-Advanced Electronics Technologies (Japan) )
  • Nishiyama, I. ( Association of Super-Advanced Electronics Technologies (Japan) )
Publication title:
Photomask and Next-Generation Lithography Mask Technology X
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5130
Pub. Year:
2003
Page(from):
1046
Page(to):
1054
Pages:
9
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819449962 [0819449962]
Language:
English
Call no.:
P63600/5130
Type:
Conference Proceedings

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