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Identification of defect source to control reticle defect density for CAR and dry etching in the photomask process

Author(s):
Cho, S.-Y. ( Samsung Electronics Co., Ltd. (South Korea) )
Ahn, W.-S. ( Samsung Electronics Co., Ltd. (South Korea) )
Cho, W.-I. ( Samsung Electronics Co., Ltd. (South Korea) )
Sung, M.-G. ( Samsung Electronics Co., Ltd. (South Korea) )
Kim, Y.-H. ( Samsung Electronics Co., Ltd. (South Korea) )
Choi, S.-W. ( Samsung Electronics Co., Ltd. (South Korea) )
Yoon, H.-S. ( Samsung Electronics Co., Ltd. (South Korea) )
Sohn, J.-M. ( Samsung Electronics Co., Ltd. (South Korea) )
3 more
Publication title:
Photomask and Next-Generation Lithography Mask Technology X
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5130
Pub. Year:
2003
Page(from):
107
Page(to):
117
Pages:
11
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819449962 [0819449962]
Language:
English
Call no.:
P63600/5130
Type:
Conference Proceedings

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