Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region (Invited Paper)
- Author(s):
- Hong, S. ( Seoul National Univ. (South Korea) )
- Kim, Y. ( Seoul National Univ. (South Korea) )
- Min, H.S. ( Seoul National Univ. (South Korea) )
- Park, Y.J. ( Seoul National Univ. (South Korea) )
- Publication title:
- Noise in Devices and Circuits
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5113
- Pub. Year:
- 2003
- Page(from):
- 267
- Page(to):
- 281
- Pages:
- 15
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819449733 [0819449733]
- Language:
- English
- Call no.:
- P63600/5113
- Type:
- Conference Proceedings
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