Electronic activity of dislocations and point defects of deformation origin in Hg1-xCdxTe

Electronic activity of dislocations and point defects of deformation origin in Hg1-xCdxTe

Author(s):

Gassan-Zade, S.G. ( Institute of Semiconductor Physics (Ukraine) )
Shepelskii, G.A. ( Institute of Semiconductor Physics (Ukraine) )
Staryi, S.V. ( Institute of Semiconductor Physics (Ukraine) )
Strikha, M.V. ( Institute of Semiconductor Physics (Ukraine) )

Publication title:

Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5065

Pub. Year:

2003

Page(from):

174

Page(to):

180

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448712 [0819448710]

Language:

English

Call no.:

P63600/5065

Type:

Conference Proceedings

Details

TDL ID:	ZA00013054
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Material Science and Material Properties for Infrared Optoelectronics
Conf. info. (Number):	2002 : 6th
Conf. info. (Venue):	Kiev, Ukraine
Conf. info. (Date):	2002.05.22-2002.05.24

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